ELEC3207: MOSFET Simulation Exercise 2025
|
Name:
|
|
|
Email address:
|
|
|
Student ID:
|
|
|
(The space for each part should be expanded as required but the report overall should not exceed 12 pages)
Part I
(a) Electrical parameter extraction (methods and results)
(b) Physical device parameter extraction (methods and results)
(c) On current with drain voltage at 3V (method and result)
(d) Theoretical MOSFET parameters (methods and results)
(e) Comparison between calculated and extracted electrical parameters
Part II ELEC3207
(a) Plot of Ion vs. low field electron mobility for Vd= 0.1 V
(b) Plot of Ion vs. low field electron mobility for Vd= 3 V
(c) Discussion/explanation of results
Part III
(method, results and discussion from device scaling investigation)