讲解 ELEC6256: MOSFET Simulation Exercise 2025调试数据库编程

ELEC6256: MOSFET Simulation Exercise 2025

(The space for each part should be expanded as required but the report overall should not exceed 12 pages)

Part I

(a) Electrical parameter extraction (methods and results)

(b) Physical device parameter extraction (methods and results)

(c) On current with drain voltage at 3V (method and result)

(d) Theoretical MOSFET parameters (methods and results)

(e) Comparison between calculated and extracted electrical parameters

Part II ELEC6256

(a) Plot of electronic band structure and explanation

(b) Plot electronic band structure in flat band conditions and give the value of V_FB.

(c) Plot V_FB vs. gate workfunction and explain intercept values.

Part III

(method, results and discussion from device scaling investigation)